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Focuses on the research and development, manufacturing, and technical services of industrial cleaning equipment
Semiconductor
Professional Application of Industrial Ultrasonic Cleaning Equipment in Semiconductor Manufacturing
As a company focused on the research and development and manufacturing of industrial ultrasonic cleaning technology, we have developed a series of high-precision ultrasonic cleaning equipment to meet the stringent requirements of semiconductor manufacturing processes. This equipment can meet the nanometer-level cleanliness requirements of wafer manufacturing and packaging testing. A detailed introduction will follow, covering technical principles, application scenarios, and equipment advantages.
I. Core Technical Principles and Equipment Characteristics
1. High-Frequency Ultrasonic Cavitation Technology
Frequency range: 40kHz~120KHz multi-band, adaptable to different structure cleaning needs
- Low frequency band (40-80kHz): Removes large-size particulate contaminants
- High frequency band (100-120kHz): Processes nano-level residue and high aspect ratio structures
Cavitation effect control: Adjusts cavitation intensity through pulse modulation technology to avoid wafer surface damage.
2. Multi-Media Synergistic Cleaning System
- Dual fluid supply system: Supports independent or mixed use of deionized water and chemical media
- Temperature control module: PID precise temperature control, temperature range 20℃~80℃.
- Circulation filtration unit: 0.1μm PTFE membrane filtration system, maintaining liquid cleanliness in real time (particle concentration <10/mL)
3. Semiconductor-Specific Structural Design
- Wafer carrying system: Polytetrafluoroethylene (PTFE) slots, supporting stress-free fixation of 6/8/12 inch wafers
- Cross-contamination prevention design: Independent chamber isolation, suitable for multiple process switching such as photoresist stripping and post-etch cleaning
- Fully enclosed structure: Internal cleanliness maintained to ISO Class 3 standard
II. Typical Semiconductor Application Scenarios
1. Wafer Front-End Process Cleaning
- Silicon wafer pretreatment: Removes silicon powder residue from cutting (particle size <1μm) and organic contaminants (TOC <10ppb)
- Lithography process support:
- Photoresist stripping: Removes thick resist layers within 5 minutes
- Post-development cleaning: Eliminates developer crystal residue
- Post-CMP cleaning: Removes CeO₂ particles from polishing solution (removal rate >99.9%)
2. Key Applications in Packaging Processes
- TSV through-hole cleaning: Achieves copper slag removal inside through-holes with an aspect ratio of 20:1 (residual amount <0.01mg/cm²)
- Pre-bonding treatment: Removes wafer surface oxides (contact angle <5°), increasing bonding strength to >15MPa
- RDL layer cleaning: Protects copper lines (line width <5μm) from corrosion, resistance change rate <0.5%
3. Equipment Component Maintenance Cleaning
- Electrostatic chuck (ESC) regeneration cleaning: Restores surface smoothness (Ra <0.1μm) and insulation performance (volume resistivity >1E15Ω·cm)
- Quartz chamber descaling: Removes deposited SiOx film (thickness >100nm), reducing cleaning cycle by 50%
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Address：Building 2, Lane 1250, Sicheng Road, Ma Lu Town, Jiading District, Shanghai